Improved Surface Quality of the Metal-Induced Crystallized Ge Seed Layer and Its Influence on Subsequent Epitaxy
Author:
Affiliation:
1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
2. Electron Microscope Facility, IBEC Innovation Platform, AIST, 16-1 Onogawa, Tsukuba 305-8569, Japan
Funder
Japan Society for the Promotion of Science
Iwatani Naoji Foundation
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b00060
Reference48 articles.
1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
2. Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
3. Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
4. In situ low temperature growth of poly-crystalline germanium thin film on glass by RF magnetron sputtering
5. Superlateral growth of a-Ge film by excimer laser annealing
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