Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer-Reference-Cited by-同舟云学术

Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer

Published:2020-10-05 Issue:14 Volume:117 Page:141601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ma Y. X.¹²^ORCID,Tang W. M.²,Lai P. T.²

Affiliation:

1. School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China

2. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, 999077 Hong Kong, China

Funder

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021370

Reference36 articles.

1. Thin, fast, and flexible

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3. Recent Progress in Organic Electronics: Materials, Devices, and Processes

4. Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress

5. Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer

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