UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

Published:2017-03 Issue:3 Volume:7 Page:035109
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kong W.¹^ORCID,Roberts A. T.²,Jiao W. Y.¹,Fournelle J.³,Kim T. H.¹,Losurdo M.⁴,Everitt H. O.²⁵^ORCID,Brown A. S.¹

Affiliation:

1. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, USA

2. Charles Bowden Laboratory, Army Aviation & Missile RD&E Center, Redstone Arsenal, Alabama 35898, USA

3. Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706, USA

4. CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari, Italy

5. Department of Physics, Duke University, Durham, North Carolina 27708, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973637

Reference31 articles.

1. Advances in group III-nitride-based deep UV light-emitting diode technology

2. III–Nitride UV Devices

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