Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors-Reference-Cited by-同舟云学术

Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors

Published:2017-06-14 Issue:22 Volume:121 Page:224503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Zhi¹,Wang Liwei²,En Yunfei²,Jiang Xiang-Wei¹³

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, Guangdong 510610, People's Republic of China

3. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985610

Reference22 articles.

1. Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling

2. Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress

3. The MOSFET Revisited: Device Physics and Modeling at the Nanoscale

4. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

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