Bandgap modulated phosphorene based gate drain underlap double-gate TFET
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205, Bangladesh
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5049611
Reference41 articles.
1. A subthermionic tunnel field-effect transistor with an atomically thin channel
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4. In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor
5. A PNPN tunnel field-effect transistor with high-kgate and low-kfringe dielectrics
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