Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy-Reference-Cited by-同舟云学术

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Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Published:2002 Issue:10 Volume:91 Page:6729
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Sun X. L.,Goss S. H.,Brillson L. J.,Look D. C.,Molnar R. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference44 articles.

1. S. Nakamura and G. Fasol,The Blue Laser Diode(Springer, Berlin, 1997).

2. Semiconductor ultraviolet detectors

3. J. Y. Duboz and M. A. Khan, inGroup III Nitride Semiconductor Compounds, edited by B. Gil (Clarendon, Oxford, 1998), p. 343.

4. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

5. GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

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