Morphology evolution in strain-compensated multiple quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862436
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1. High-power laser diodes based on asymmetric separate-confinement heterostructures
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2. Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering;Journal of Alloys and Compounds;2019-01
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4. Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode;Physical Chemistry Chemical Physics;2016
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