Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li-Reference-Cited by-同舟云学术

Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li

Published:2016-03-14 Issue:11 Volume:108 Page:112404
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Miyakozawa Shohei¹,Chen Lin²,Matsukura Fumihiro²³^ORCID,Ohno Hideo¹²³

Affiliation:

1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

2. WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

3. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Funder

Cooperative Research Project of RIEC, Tohoku University

R&D Project for ICT Key Technology of MEXT

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference44 articles.

1. Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. Theory of magnetic anisotropy inIII1−xMnxVferromagnets

4. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

5. Control of Magnetic Anisotropy in(Ga,Mn)Asby Lithography-Induced Strain Relaxation

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