Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties-Reference-Cited by-同舟云学术

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Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

Published:2010-11-15 Issue:10 Volume:108 Page:103525
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dialynas G. E.,Kalliakos S.,Xenogianni C.,Androulidaki M.,Kehagias T.,Komninou P.,Savvidis P. G.,Hatzopoulos Z.,Pelekanos N. T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3510490

Reference24 articles.

1. QUANTUM DOT OPTO-ELECTRONIC DEVICES

2. Coupling and Entangling of Quantum States in Quantum Dot Molecules

3. Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects

4. Semiconductor quantum light sources

5. High index orientation effects of strained self-assembled InGaAs quantum dots

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-Room-Temperature Single-Photon Emission from a Strongly Confined Piezoelectric InAs Quantum Dot;Physical Review Applied;2023-09-07

2. Redshifted biexciton and trion lines in strongly confined (211)B InAs/GaAs piezoelectric quantum dots;Journal of Applied Physics;2022-03-28

3. Effect of Graded Bandgap AlxGa1-xAs Front Layer on Optical Properties and Device Performance of GaAs Solar Cells Grown on (111)A GaAs Substrates;Brazilian Journal of Physics;2022-02-25

4. Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate;physica status solidi (a);2021-12-23

5. Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio;Applied Surface Science;2017-01

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