Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate-Reference-Cited by-同舟云学术

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Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate

Published:2021-12-23 Issue: Volume: Page:2100466
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Matsumoto Atsushi¹^ORCID,Akahane Kouichi¹,Umezawa Toshimasa¹,Nakajima Shinya¹,Yamamoto Naokatsu¹,Kanno Atsushi¹

Affiliation:

1. National Institute of Information and Communications Technology (NICT) 4-2-1, Nukui-Kitamachi Koganei Tokyo 184-8795 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100466

Reference45 articles.

1. Cisco Visual Networking Index http://www.cisco.com/c/en/us/solutions/service-provider/visual-networking-index-vni/index.html#∼completeforecast. (accessed: April 2021)

2. Nonduplicate Polarization-Diversity 32 × 32 Silicon Photonics Switch Based on a SiN/Si Double-Layer Platform

3. Wavelength Locking of a Si Ring Modulator Using an Integrated Drop-Port OMA Monitoring Circuit

4. Planar-type polarization beam splitter based on a bridged silicon waveguide coupler

5. Cascaded Mach-Zehnder wavelength filters in silicon photonics for low loss and flat pass-band WDM (de-)multiplexing

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