Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415, USA
Funder
U.S. Department of Energy (Department of Energy)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4923358
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5. Capacitance Transient Spectroscopy
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