Photocurrent and photoluminescence from quantum‐confined electrons in periodically δ‐doped Si‐GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354759
Reference17 articles.
1. Spatial localization of impurities in δ‐doped GaAs
2. Three‐terminal delta‐doped barrier switching device with S‐shaped negative differential resistance
3. A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET
4. Improvement of two‐dimensional electron gas concentration in selectively doped GaAs/N‐AlGaAs heterostructures by atomic planar doping
5. Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors
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1. Elastic and elastic-plastic analysis of multilayer thin films:Closed-form solutions;Journal of Applied Physics;2004-10-15
2. Time-resolved interband transitions in periodic multilayer δ-doped systems;Physical Review B;1998-09-15
3. Stark effect studied in -doped GaAs structures;Semiconductor Science and Technology;1997-11-01
4. Subband structure of multiple Si δ-doped planes in GaAs;Superlattices and Microstructures;1993-09
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