Strain release management in SiGe/Si films by substrate patterning-Reference-Cited by-同舟云学术

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Strain release management in SiGe/Si films by substrate patterning

Published:2014-12-15 Issue:24 Volume:105 Page:242103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mondiali V.¹,Bollani M.²,Chrastina D.¹,Rubert R.¹,Chahine G.³,Richard M. I.³⁴,Cecchi S.¹,Gagliano L.⁵,Bonera E.⁵,Schülli T.³,Miglio L.⁵

Affiliation:

1. L-NESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100 Como, Italy

2. IFN-CNR, L-NESS, via Anzani 42, 22100 Como, Italy

3. ID01/ESRF, BP 220, F-38043 Grenoble Cedex, France

4. Aix-Marseille Universite, CNRS, IM2NP UMR 7334, Campus de Saint Jerome, F-13397 Marseille Cedex, France

5. L-NESS and Department of Material Science, University of Milano-Bicocca, via Cozzi 55, I-20125 Milano, Italy

Funder

Fondazione Cariplo (Cariplo Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904455

Reference26 articles.

1. Silicon Device Scaling to the Sub-10-nm Regime

2. SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

3. Uniaxial-process-induced strained-Si: extending the CMOS roadmap

4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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1. Log-Normal Glide and the Formation of Misfit Dislocation Networks in Heteroepitaxial ZnS on GaP;Crystal Growth & Design;2024-07-03

2. X-ray Diffraction Imaging of Deformations in Thin Films and Nano-Objects;Nanomaterials;2022-04-15

3. Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals;Journal of Applied Crystallography;2018-03-01

4. Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures;Nanoscience and Nanotechnology Letters;2017-07-01

5. Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning;Nanotechnology;2016-09-08

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