Three-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3054174
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1. A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation;IEEE Transactions on Electron Devices;2022-08
2. Highly sensitive spintronic strain-gauge sensor based on a MgO magnetic tunnel junction with an amorphous CoFeB sensing layer;Applied Physics Letters;2018-02-05
3. Emerging Trends in Design and Applications of Memory-Based Computing and Content-Addressable Memories;Proceedings of the IEEE;2015-08
4. NONVOLATILE FULL ADDER BASED ON A SINGLE MULTIVALUED HALL JUNCTION;SPIN;2013-06
5. Realization of Complex Logic Operations at the Nanoscale;Architecture and Design of Molecule Logic Gates and Atom Circuits;2012-10-26
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