Trapping noise in semiconductor devices: A method for determining the noise spectrum as a function of the trap position
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360509
Reference11 articles.
1. Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources
2. 1/f noise sources
3. 1/f noise in MOS devices, mobility or number fluctuations?
4. Random telegraph signal currents and low-frequency noise in junction field effect transistors
5. A physical model for random telegraph signal currents in semiconductor devices
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