Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources-Reference-Cited by-同舟云学术

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Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources

Published:1988-03 Issue:3 Volume:76 Page:233-258
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

van der Ziel A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/244/00004401.pdf?arnumber=4401

Cited by 253 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Effects of Total Ionizing Dose on Low Frequency Noise Characteristics in SiGe HBT;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24

3. Phonons in the 1/f noise of topological insulators;Applied Physics Letters;2023-04-24

4. Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs;Micromachines;2023-03-04

5. 1/f laws found in non-human music;Scientific Reports;2023-01-24

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