Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98055
Reference13 articles.
1. Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structures
2. Hot-Electron Relaxation in GaAs Quantum Wells
3. Hot photoluminescence of GaAs-AlGaAs multiple quantum well structures under high excitation by a single shot of 30 ps, 532 nm laser
4. On the scattering of electrons by polar optical phonons in quasi-2D quantum wells
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1. Relaxation femtoseconde des électrons dans les semiconducteurs en régime non-markovien;Annales de Physique;1999
2. An overthreshold state of electron-hole plasma in GaAs at interband absorption of high-power picosecond light pulses;Solid State Communications;1996-06
3. The Influence of a Plasmon Assisted Stimulated Raman Scattering on the Reversible Bleaching of Gallium Arsenide by a High-Power Picosecond Light Pulse;Ultrafast Processes in Spectroscopy;1996
4. Phonon Oscillations in a Spectrum of Reversible Bleaching of Gallium Arsenide under Interband Absorption of a High-Power Picosecond Light Pulse;Ultrafast Processes in Spectroscopy;1996
5. Ultrafast relaxation of photoexcited electrons in undoped GaAs measured by absorption saturation of spin-orbit-split transitions;physica status solidi (b);1995-03-01
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