Ultrafast relaxation of photoexcited electrons in undoped GaAs measured by absorption saturation of spin-orbit-split transitions
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAs
2. Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum Wells
3. Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs
4. Hot carrier relaxation in InP and GaAs on a subpicosecond time scale
5. Femtosecond gain dynamics due to initial thermalization of hot carriers injected at 2 eV in GaAs
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1. Ultrafast carrier dynamics in a highly excited GaN epilayer;Physical Review B;2001-03-01
2. Nonequilibrium plasmons in optically excited semiconductors;Physical Review B;2000-12-15
3. Screened Coulomb quantum kinetics for resonant femtosecond spectroscopy in semiconductors;Physical Review B;1999-01-15
4. Relaxation femtoseconde des électrons dans les semiconducteurs en régime non-markovien;Annales de Physique;1999
5. Ultrafast Electron Relaxation through Coulomb Collisions in GaAs;physica status solidi (b);1997-11
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