Anisotropy control in CF4microwave plasma etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343127
Reference17 articles.
1. A New CBrF3 Process for Etching Tapered Trenches in Silicon
2. Ion‐surface interactions in plasma etching
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4. Chemical and Physical Roles of Individual Reactive Ions in Si Dry Etching
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomistic simulation of silicon bombardment by energetic CF3+: product distributions and energies;Thin Solid Films;2000-10
2. On the active surface layer in CF3+ etching of Si: Atomistic simulation and a simple mass balance model;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-03
3. Parametric study of the etching of SiO[sub 2] in SF[sub 6] plasmas: Modeling of the etching kinetics and validation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
4. Simulation of silicon dry etching through a mask in low pressure fluorine-based plasma;Vacuum;1996-12
5. Reactive ion etching characterization of a-SiC: H in CF4/O2 plasma;Materials Science and Engineering: B;1995-01
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