Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913593
Reference22 articles.
1. A new approach to high‐efficiency multi‐band‐gap solar cells
2. Short‐circuit current and energy efficiency enhancement in a low‐dimensional structure photovoltaic device
3. Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells
4. In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells
5. In situ curvature monitoring for metal–organic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells
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1. Photothermal investigation for optimizing a lattice strain relaxation condition of InGaAs/GaAsP superlattice photovoltaic structures from a nonradiative transition point of view;Journal of Physics D: Applied Physics;2022-12-13
2. Reduction of non-radiative recombination by inserting a GaAs strain-relaxation interlayer in InGaAs/GaAsP superlattice solar cells investigated by photo-thermal spectroscopy;Journal of Applied Physics;2020-11-21
3. Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure;Scientific Reports;2019-05-27
4. Investigation of miniband formation and optical properties of strain-balanced InGaAs/GaAsP superlattice structure embedded in p–i–n GaAs solar cells;Japanese Journal of Applied Physics;2017-07-13
5. Current flow mechanism in GaAs solar cells with GaInAs quantum dots;AIP Conference Proceedings;2016
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