Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films
Author:
Affiliation:
1. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
2. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA
Funder
Advanced Research Projects Agency - Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0019349
Reference16 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
2. Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics
3. Design of 1.2 kV Power Switches With Low $R_{\mathrm{{\scriptscriptstyle ON}}}$ Using GaN-Based Vertical JFET
4. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
5. Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
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