Carrier surface generation and recombination effects in photoconduction of HgI2single crystals-Reference-Cited by-同舟云学术

Carrier surface generation and recombination effects in photoconduction of HgI2single crystals

Published:1986-11 Issue:9 Volume:60 Page:3182-3187
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Burshtein Z.,Akujieze Justin K.,Silberman E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.337733

Reference19 articles.

1. Proceedings of the International Workshop on HgI2 Nuclear Radiation Detectors, 1982, Jerusalem, in Nucl. Instrum. Methods213, (1983).NIMRD90167-5087

2. Charge Carrier Transport Properties of Semiconductor Materials Suitable for Nuclear Radiation Detectors

3. Carrier surface recombination in HgI2photon detectors

4. Gamma Ray Efficiency Comparisons for Si(Li), Ge, CdTe and HgI2 Detectors

5. Toward the Energy Resolution Limit of Mercuric Iodide in Room Temperature Low Energy X-Ray Spectrometry

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