Surface Recombination and Space-Charge-Limited Photocurrent-Voltage (PC-V) Measurements in (Cd,Mn)Te Samples–Kinetics of Photocurrent (PC)

Author:

Mycielski AndrzejORCID,Kochanowska Dominika M.ORCID,Wardak AnetaORCID,Gościński Krzysztof,Szot Michał,Dobrowolski WitoldORCID,Janusz Gabriela,Górska Małgorzata,Janiak Łukasz,Czarnacki Wiesław,Świderski ŁukaszORCID,Iwanowska-Hanke Joanna,Moszyński Marek

Abstract

Photocurrent-voltage characteristic (PC-V) is a method of determining the critical parameter in X-ray and gamma-ray detector plates, i.e., the carrier mobility-lifetime product, μτ. We show for the (Cd,Mn)Te samples that the measurement results depend strongly on the surface treatment and the space charge distribution. The PC-V characteristics obtained for ħω > Eg and ħω ~ Eg indicated that etching with 20% HCl caused an appearance of a significant concentration of very shallow surface traps at the (Cd,Mn)Te sample surface. These traps seriously changed the results of measurements of PC-V characteristics and PC kinetics. We also noticed a small contribution of holes to photoconductivity in the PC kinetics. The measurements of PC-V characteristics for ħω > Eg may test the detector plate surface quality.

Funder

National Centre for Research and Development

Foundation for Polish Science

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

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1. Large-volume CdZnTe bar detectors characterized by laser-induced transient currents;Journal of Applied Physics;2023-12-08

2. Contact and material properties of (Cd,Mn)Te and (Cd,Mn)(Te,Se);2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD);2023-11-04

3. Trap states near the surface in (Cd,Mn)Te crystals;2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD);2023-11-04

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