Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368490
Reference29 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Strained coherent InAs quantum box islands on GaAs(100): Size equalization, vertical self-organization, and optical properties
3. Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)
4. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
5. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
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