Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3275051
Reference85 articles.
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1. Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states;Journal of Materials Science: Materials in Electronics;2018-10-08
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