Characterization of cubic SiC films grown on thermally oxidized Si substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368370
Reference34 articles.
1. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates
2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
3. SiC Silicon‐on‐Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclobutane
4. Electrical characterization of SiC for high-temperature thermal-sensor applications
5. Scanning Auger Microscopy Study of Heterogeneous Growth of SiC Film on Si(100) by Reaction with a C2H2Beam
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1. Effect of Thermal Annealing on Nanostructure and Shape Transition in SiC–C Nanocomposites;Nanoscience and Nanotechnology Letters;2012-04-01
2. Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes;Semiconductors;2010-06
3. Temporal and spatial evolution of Si atoms in plasmas produced by a nanosecond laser ablating silicon carbide crystals;Physical Review E;2009-07-13
4. Characterization of a stoichiometric SiC film deposited on a thermally oxidized Si substrate;Journal of Alloys and Compounds;2008-08
5. Nanocrystalline SiC films prepared by direct deposition of carbon and silicon ions;Thin Solid Films;2008-03
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