Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3189086
Reference21 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Growth and characterisation of InAs/InGaAs quantum dots like structure on GaAs/Si substrate by AP-MOCVD
3. High-Performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5} \hbox{As/GaAs}$ Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters
4. Structural and optical properties of stacked self-assembled InAs∕InGaAs quantum dots on graded Si1−xGex∕Si substrate
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1. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
2. Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission;Journal of Physics D: Applied Physics;2012-03-23
3. Electric Field and Current Effects on Sintering;Sintering;2012
4. InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy;physica status solidi (c);2011-12-20
5. Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate;Journal of Crystal Growth;2011-05
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