Ultrahigh Hall mobility and suppressed backward scattering in layered semiconductor Bi2O2Se-Reference-Cited by-同舟云学术

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Ultrahigh Hall mobility and suppressed backward scattering in layered semiconductor Bi2O2Se

Published:2018-08-13 Issue:7 Volume:113 Page:072106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tong Tong¹^ORCID,Zhang Minhao¹,Chen Yequan¹,Li Yan¹,Chen Liming¹,Zhang Junran¹^ORCID,Song Fengqi²,Wang Xuefeng¹^ORCID,Zou Wenqin²,Xu Yongbing¹,Zhang Rong¹

Affiliation:

1. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

2. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing 210093, People's Republic of China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5042727

Reference36 articles.

1. The rise of graphene

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

5. Carbon and Graphene Quantum Dots for Optoelectronic and Energy Devices: A Review

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