Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide-Reference-Cited by-同舟云学术

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Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide

Published:1995-11-13 Issue:20 Volume:67 Page:2931-2933
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kyllesbech Larsen K.,La Via F.,Lombardo S.,Raineri V.,Campisano S. U.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114846

Reference13 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic ellipsometry investigation of silicide formation by rapid thermal process;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

2. Ion Implantation-Induced Defects and the Influence of Titanium Silicidation;MRS Proceedings;1998-01

3. Titanium Silicidation and Secondary Defect Annihilation in ION Beam Processed Sige Layers;MRS Proceedings;1995

4. Electrically active defects in surface preamorphized and subsequently RTP-annealed Si and the effect of titanium silicidation;1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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