High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1805199
Reference18 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. High-power UV InGaN/AlGaN double-heterostructure LEDs
3. High-power AlGaInN flip-chip light-emitting diodes
4. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
5. Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN
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3. High-reflectance of hybrid reflector with distributed Bragg reflector and metal mirror for flip-chip ultra-violet light-emitting diodes;International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies;2014-12-18
4. Ag/Ni/Multilayer Graphene Reflective Ohmic Contacts with p-Type GaN;Science of Advanced Materials;2014-01-01
5. Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN;Physica E: Low-dimensional Systems and Nanostructures;2010-07
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