Switching kinetics of SiC resistive memory for harsh environments-Reference-Cited by-同舟云学术

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Switching kinetics of SiC resistive memory for harsh environments

Published:2015-07 Issue:7 Volume:5 Page:077121
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Morgan K. A.¹^ORCID,Fan J.²,Huang R.¹,Zhong L.²,Gowers R. P.²,Jiang L.²,de Groot C. H.¹

Affiliation:

1. Nano Research Group, Electronics and Computer Science, University of Southampton, Southampton, Hampshire, United Kingdom, SO171BJ

2. Faculty of Engineering and the Environment, University of Southampton, Southampton, Hampshire, United Kingdom, SO171BJ

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Atomic Weapons Establishment (AWE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/7/1.4926674.pdf?itemId=/content/aip/journal/adva/5/7/10.1063/1.4926674&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference29 articles.

1. Emerging memories: resistive switching mechanisms and current status

2. Nanoionics-based resistive switching memories

3. Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure

4. Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

5. Resistively switching Pt/spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography

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1. An ultra high-endurance memristor using back-end-of-line amorphous SiC;Scientific Reports;2024-06-18

2. Reservoir computing using back-end-of-line SiC-based memristors;Materials Advances;2023

3. Elaboration of Graded Band-Gap a-SiC Thin-Film Using RF Magnetron Sputtering Technique;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22

4. Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing;Nanomaterials;2022-06-19

5. Enhanced Photoresponse of Ultraviolet Photodetector via RF Sputtered ZnO/a-SiC Heterostructure;2022 19th International Multi-Conference on Systems, Signals & Devices (SSD);2022-05-06

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