X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3176478
Reference11 articles.
1. Single crystal growth and optical energy gap of gallium telluride
2. Exploration of GaTe for gamma detection
3. Surface passivation technology for III–V semiconductor nanoelectronics
4. X-ray photoemission analysis of chemically treated I–III–VI semiconductor surfaces
5. X-ray photoemission analysis of CS2 treated polycrystalline Cu(In,Ga)Se2
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