Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4807122
Reference29 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices
4. A novel GaN-based multiparameter sensor system for biochemical analysis
5. Cd-Doped InGaN Films Grown on GaN Films
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