Cd-Doped InGaN Films Grown on GaN Films

Author:

Nakamura Shuji,Iwasa Naruhito,Nagahama Shin-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Semiconductor LEDs;The Fundamentals and Applications of Light-Emitting Diodes;2021

2. Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold;Applied Physics Letters;2013-05-13

3. Stokes Shift and Band Gap Bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy;Acta Physica Polonica A;2008-02

4. III-V Nitrides and Silicon Carbide as Optoelectronic Materials;The Handbook of Photonics, Second Edition;2006-12-21

5. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2006

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