Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4807127
Reference16 articles.
1. Observation of band structure on amorphous silicon surface and performance of solar cells with controlled band offsets on hetero-junctions
2. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells
3. Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells
4. Extraction of carriers photogenerated at p type amorphous SiC window layer in amorphous Si solar cells
5. Improvement ofpin-type amorphous silicon solar cell performance by employing double silicon-carbidep -layer structure
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