Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120596
Reference18 articles.
1. A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors
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4. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
5. Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
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