Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
Author:
Funder
DFG
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870456
Reference27 articles.
1. EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide
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4. Room temperature coherent control of defect spin qubits in silicon carbide
5. Excitation Properties of Silicon Vacancy in Silicon Carbide
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