Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility-Reference-Cited by-同舟云学术

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

Published:2018-04-28 Issue:16 Volume:123 Page:161538
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shijeesh M. R.¹,Jayaraj M. K.¹²³

Affiliation:

1. Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala, India

2. Centre of Excellence in Advanced Materials, Cochin University of Science and Technology, Cochin 682022, Kerala, India

3. Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology, Cochin 682022, Kerala, India

Funder

University Grants Commission

Department of Science and Technology | Kerala State Council for Science, Technology and Environment

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4991812

Reference24 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates

3. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

4. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

5. A review of recent advances in transparent p-type Cu2O-based thin film transistors

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process;Journal of Vacuum Science & Technology A;2024-08-30

2. Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering;Journal of Science: Advanced Materials and Devices;2024-06

3. Effect of Passivation on BEOL-Compatible Oxide Semiconductor Transistor;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22

4. Sol-Gel Cupric Oxide Thin Film Transistors: Alkali Metal Doping for Low Temperature Flexible Devices;2023 IEEE International Flexible Electronics Technology Conference (IFETC);2023-08-13

5. Peak-fitting of Cu 2p photoemission spectra in Cu0, Cu1+, and Cu2+ oxides: A method for discriminating Cu0 from Cu1+;Applied Surface Science;2023-06