Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis-Reference-Cited by-同舟云学术

Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis

Published:2003-07-07 Issue:1 Volume:83 Page:168-170
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Normand P.,Kapetanakis E.,Dimitrakis P.,Tsoukalas D.,Beltsios K.,Cherkashin N.,Bonafos C.,Benassayag G.,Coffin H.,Claverie A.,Soncini V.,Agarwal A.,Ameen M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1588378

Reference9 articles.

1. Fast and long retention-time nano-crystal memory

2. Formation of 2-D Arrays of Silicon Nanocrystals in Thin SiO[sub 2] Films by Very-Low Energy Si[sup +] Ion Implantation

3. Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis

4. Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing

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