Thermal and direct etching mechanisms of Si(100) with a hyperthermal chlorine beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356074
Reference13 articles.
1. Surface science aspects of etching reactions
2. Measurement of defect profiles in reactive ion etched silicon
3. Molecular dynamics and quasidynamics simulations of the annealing of bulk and near‐surface interstitials formed in molecular‐beam epitaxial Si due to low‐energy particle bombardment during deposition
4. Summary Abstract: Ion-enhanced processes in etching of silicon
5. Anisotropic Si Etching by a Supersonic Cl2 Beam
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