Theoretical and experimental study of dynamics of photoexcited carriers in GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4849856
Reference30 articles.
1. InGaN-based violet laser diodes
2. Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and anIn0.07Ga0.93N/In0.12Ga0.88Nmultiple quantum well
3. Monte Carlo simulation of ultrafast processes in photoexcited semiconductors: Coherent and incoherent dynamics
4. Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopy
5. Subpicosecond thermalization and relaxation of highly photoexcited electrons and holes in intrinsic andp-type GaAs and InP
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1. Photoelectron scattering in a p-GaN(Cs,O) photocathode;Journal of Physics: Conference Series;2018-03
2. Towards noise-aware surrogate models of carrier population dynamics in optically excited GaN;SPIE Proceedings;2017-05-19
3. Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy;Physical Review B;2016-12-19
4. Theoretical and Experimental Study of Time- and Temperature-Dependent Photoluminescence in ZnO;Journal of Electronic Materials;2014-05-24
5. Experimental and theoretical study of dephasing processes in the kinetics of photoexcited carriers in GaN;physica status solidi (c);2014-02
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