Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure-Reference-Cited by-同舟云学术

Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

Published:2014-10-21 Issue:15 Volume:116 Page:153905
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Guo P.¹,Li D. L.¹²,Feng J. F.¹²,Kurt H.²³,Yu G. Q.¹,Chen J. Y.²,Wei H. X.¹,Coey J. M. D.²^ORCID,Han X. F.¹

Affiliation:

1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. CRANN and School of Physics, Trinity College, Dublin 2, Ireland

3. Department of Engineering Physics, Istanbul Medeniyet University, 34720 Istanbul, Turkey

Funder

State Key Project of Fundamental Research of Ministry of Science and Technology

Science Foundation Ireland (SFI)

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4898683

Reference32 articles.

1. Magnetic tunnel junctions

2. Wide range and tunable linear magnetic tunnel junction sensor using two exchange pinned electrodes

3. Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes

4. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

5. Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

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