Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1920418
Reference14 articles.
1. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
2. Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD
3. Density Control of GaSb/GaAs Self-assembled Quantum Dots (∼25nm) Grown by Molecular Beam Epitaxy
4. Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy
5. Formation of GaSb/GaAs quantum dots in MOCVD growth
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1. Room-temperature photoluminescence of AP-MOVPE grown single GaSb/GaAs quantum dot layer;Journal of Crystal Growth;2019-12
2. Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE;Journal of Crystal Growth;2018-10
3. Self Assembled Growth of GaSb Nano Triangles on GaN/Sapphire Substrate;Journal of Nanoscience and Nanotechnology;2013-03-01
4. Growth Process of GaAs Cap Layers on GaSb/GaAs Quantum Dot Surfaces;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
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