Piezoresistive characterization of bottom-up, n-type silicon microwires undergoing bend deformation
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg R3T 5V6, Canada
2. Department of Chemistry, University of Manitoba, Winnipeg R3T 2N2, Canada
Funder
Canadian Foundation for Innovation
Manitoba Research and Innovation Fund
University of Manitoba
Natural Sciences and Engineering Research Council of Canada (Conseil de Recherches en Sciences Naturelles et en Génie du Canada)
Canada Research Chairs (Chaires de recherche du Canada)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906034
Reference37 articles.
1. Piezoresistance Effect in Germanium and Silicon
2. Analysis of piezoresistance in p-type silicon for mechanical sensors
3. Strained Si on insulator technology: from materials to devices
4. Review: Semiconductor Piezoresistance for Microsystems
5. Si microwire-array solar cells
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