Ultrahigh stress response and storage properties in a single CdS nanobelt-based flexible device for an erasable nonvolatile stress sensing and memory effect-Reference-Cited by-同舟云学术

Ultrahigh stress response and storage properties in a single CdS nanobelt-based flexible device for an erasable nonvolatile stress sensing and memory effect

Published:2019 Issue:25 Volume:7 Page:7654-7663
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yang Xiaoqian¹²³⁴⁵,Zhou Huiying⁶⁷⁸⁵,Chen Taowen¹²³⁴⁵,Zhao Jie⁹³⁴⁵,Tong Tao¹²³⁴⁵,Xiao Yanhe⁹³⁴⁵,Lei Shuijin⁹³⁴⁵^ORCID,Cheng Baochang¹²³⁴⁵^ORCID

Affiliation:

1. Nanoscale Science and Technology Laboratory

2. Institute for Advanced Study

3. Nanchang University

4. Jiangxi 330031

5. P. R. China

6. Computer and Information Engineering School

7. Central South University of Forestry and Technology

8. Changsha 410004

9. School of Materials Science and Engineering

Abstract

A single CdS nanobelt with numerous stacking faults can not only show a giant response to compressive and tensile strains with excellent sensitivity, responsivity, and response and recovery speed, but also an erasable nonvolatile stress sensing and memory effect.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC01561B

Reference59 articles.

1. Electrically conductive polymer composites for smart flexible strain sensors: a critical review

2. Resistive electronic skin