Highly sensitive detection of NO2gas using BGaN/GaN superlattice-based double Schottky junction sensors-Reference-Cited by-同舟云学术

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Highly sensitive detection of NO2gas using BGaN/GaN superlattice-based double Schottky junction sensors

Published:2015-06-15 Issue:24 Volume:106 Page:243504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bishop C.¹²,Salvestrini J. P.²³,Halfaya Y.²⁴,Sundaram S.²,El Gmili Y.²,Pradere L.⁴,Marteau J. Y.⁴,Assouar M. B.⁵,Voss P. L.¹²,Ougazzaden A.¹²

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

2. Georgia Tech—CNRS, UMI 2958, 57070 Metz, France

3. Université de Lorraine, CentraleSupelec, LMOPS, EA4423, 57070 Metz, France

4. PSA Peugeot Citroën, 75, Avenue de la Grande Armée, Paris 75116, France

5. CNRS, Inst Jean Lamour, F-54506 Vandoeuvre Les Nancy, France

Funder

Peugeot PSA Citroen

Region of Lorraine, France

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922803

Reference16 articles.

1. A hydrogen−sensitive MOS field−effect transistor

2. Gas sensors based on catalytic metal-gate field-effect devices

3. Group III-nitride-based gas sensors for combustion monitoring

4. Pt/GaN Schottky diodes for hydrogen gas sensors

5. I. Lundstrom and C. Svensson ,Solid State Chemical Sensors, edited by J. Janata and R. J. Huber ( Academic, Orlando, 1985) p. 1–63.

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