Effect of hydrogen ion shower doping in polycrystalline silicon thin‐film transistors-Reference-Cited by-同舟云学术

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Effect of hydrogen ion shower doping in polycrystalline silicon thin‐film transistors

Published:1995-01-02 Issue:1 Volume:66 Page:31-33
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mishima Y.,Takei M.,Matsumoto N.,Uematsu T.,Wakino U.,Kakehi T.,Okabe M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114171

Reference8 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flat panel displays for ubiquitous product applications and related impurity doping technologies;Journal of Applied Physics;2006-06

2. Low Temperature (<150°C) Doping Techniques for Polysilicon TFT's;MRS Proceedings;2004

3. Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping;Japanese Journal of Applied Physics;2002-03-15

4. Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system;Journal of Applied Physics;1995-07

5. A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure;International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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