Nonstoichiometry and dopants related phenomena in low temperature GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356099
Reference23 articles.
1. Molecular beam epitaxy
2. Surface stoichiometry and structure of GaAs
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4. Low‐temperature molecular beam epitaxy of gallium arsenide
5. An investigation of GaAs films grown by MBE at low substrate temperatures and growth rates
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