Low‐temperature molecular beam epitaxy of gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98069
Reference4 articles.
1. Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs
2. Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperatures
3. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy
4. Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular‐beam epitaxy
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