Study of electron traps in semi‐insulating gallium‐arsenide buffer layers for the suppression of backgating by the zero‐bias thermally stimulated current technique-Reference-Cited by-同舟云学术

Study of electron traps in semi‐insulating gallium‐arsenide buffer layers for the suppression of backgating by the zero‐bias thermally stimulated current technique

Published:1992-07-06 Issue:1 Volume:61 Page:49-51
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lau W. S.,Chong T. C.,Tan L. S.,Goo C. H.,Goh K. S.,Lee K. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.107664

Reference14 articles.

1. Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT's

2. New MBE buffer used to eliminate backgating in GaAs MESFETs

3. Characterization of deep levels using unconventional zero-bias thermally stimulated current in ion-implanted semi-insulating GaAs substrates

4. The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique

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